Semiconductor device and method of forming the same

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S785000

Reexamination Certificate

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06933227

ABSTRACT:
A process for forming a semiconductor structure includes forming a gate dielectric overlying a substrate, a conductive gate electrode overlying the gate dielectric, a barrier layer overlying and in physical contact with the conductive gate electrode, and an organic anti-reflective coating (ARC) layer overlying and in physical contact with the barrier layer.

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patent: 2003/0049566 (2003-03-01), Sabnis et al.
patent: 2003/0087188 (2003-05-01), Jung et al.
patent: 2004/0043604 (2004-03-01), Vaarstra

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