Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-08-23
2005-08-23
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S785000
Reexamination Certificate
active
06933227
ABSTRACT:
A process for forming a semiconductor structure includes forming a gate dielectric overlying a substrate, a conductive gate electrode overlying the gate dielectric, a barrier layer overlying and in physical contact with the conductive gate electrode, and an organic anti-reflective coating (ARC) layer overlying and in physical contact with the barrier layer.
REFERENCES:
patent: 5918147 (1999-06-01), Filipiak et al.
patent: 6232209 (2001-05-01), Fujiwara et al.
patent: 6541397 (2003-04-01), Bencher
patent: 6589858 (2003-07-01), Dakshina-Murthy et al.
patent: 6593446 (2003-07-01), Jung et al.
patent: 2003/0004283 (2003-01-01), Puligadda et al.
patent: 2003/0049566 (2003-03-01), Sabnis et al.
patent: 2003/0087188 (2003-05-01), Jung et al.
patent: 2004/0043604 (2004-03-01), Vaarstra
Adetutu Olubunmi O.
Lucas Kevin D.
Balconi-Lamica Michael J.
Chiu Joanna G.
Fourson George
Freescale Semiconductor Inc.
Toledo Fernando L.
LandOfFree
Semiconductor device and method of forming the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and method of forming the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of forming the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3507480