High-density metal capacitor using dual-damascene copper...

Details High-density metal capacitor using dual-damascene copper... High-density metal capacitor using dual-damascene copper...

2005-06-07

2005-06-07

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S396000

Reexamination Certificate

active

06902972

ABSTRACT:
An electronic structure having a first conductive layer provided by a dual damascene fabrication process; an etch-stop layer provided by the fabrication process, and electrically coupled with the first conductive layer, the etch-stop layer having a preselected dielectric constant and a predetermined geometry; and a second conductive layer, electrically coupled with the etch-stop layer. The structure can be, for example, a metal-insulator-metal capacitor, an antifuse, and the like.

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