Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-02-15
2005-02-15
Niebling, John F. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S281000, C438S187000, C438S299000, C438S589000, C438S770000, C257SE21542, C257SE21629
Reexamination Certificate
active
06855606
ABSTRACT:
In a method of manufacturing a semiconductor device, a semiconductor layer is patterned to form a source region, a channel region, and a drain region in the semiconductor layer. The channel region extends between the source region and the drain region. Corners of the channel region are rounded by annealing the channel region to form a nano-rod structure. Part of the nano-rod structure is then used as a gate channel. Preferably, a gate dielectric and a gate electrode both wrap around the nano-rod structure, with the gate dielectric being between the nano-rod structure and the gate electrode, to form a transistor device.
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Chen Hao-Yu
Hu Chenming
Yang Fu-Liang
Yeo Yee-Chia
Niebling John F.
Pompey Ron
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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