Etching a substrate: processes – Gas phase etching of substrate – With measuring – testing – or inspecting
Reexamination Certificate
2005-02-08
2005-02-08
Norton, Nadine G. (Department: 1765)
Etching a substrate: processes
Gas phase etching of substrate
With measuring, testing, or inspecting
C216S067000, C216S068000, C216S080000, C438S719000, C438S721000
Reexamination Certificate
active
06852242
ABSTRACT:
A substrate processing apparatus has a chamber with a substrate transport to transport a substrate onto a substrate support in the chamber, a gas supply to provide a gas in the chamber, a gas energizer to energize the gas, and a gas exhaust to exhaust the gas. A controller operates one or more of the substrate support, gas supply, gas energizer, and gas exhaust, to set etching process conditions in the chamber to etch a plurality of substrates, thereby depositing etchant residues on surfaces in the chamber. The controller also operates one or more of the substrate support, gas supply, gas energizer, and gas exhaust, to set cleaning process conditions in the chamber to clean the etchant residues. The cleaning process conditions comprise a volumetric flow ratio of O2to CF4of from about 1:1 to about 1:40.
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Huang Tuo-Chuan
Jiang Anbei
Sun Zhi-Wen
Bach Joseph
Janah & Associates
Norton Nadine G.
Tran Binh X.
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