Methods of forming rugged electrically conductive surfaces...

Details Methods of forming rugged electrically conductive surfaces... Methods of forming rugged electrically conductive surfaces...

2005-11-15

2005-11-15

Lee, Eddie (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S254000, C438S398000, C438S210000

Reexamination Certificate

active

06964901

ABSTRACT:
The invention includes methods of forming rugged electrically conductive surfaces. In one method, a layer is formed across a substrate and subsequently at least partially dissociated to form gaps extending to the substrate. An electrically conductive surface is formed to extend across the at least partially dissociated layer and within the gaps. The electrically conductive surface has a rugged topography imparted by the at least partially dissociated layer and the gaps. The topographically rugged surface can be incorporated into capacitor constructions. The capacitor constructions can be incorporated into DRAM cells, and such DRAM cells can be incorporated into electrical systems.

REFERENCES:
patent: 5700710 (1997-12-01), Zenke
patent: 6524927 (2003-02-01), Sugawara et al.
patent: 6723613 (2004-04-01), Huang
patent: 6753618 (2004-06-01), Basceri et al.
patent: 2001/0012656 (2001-08-01), Rhodes et al.
patent: 2003/0129807 (2003-07-01), Ping et al.

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