Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-08-30
2005-08-30
Pham, Long (Department: 2814)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S778000, C438S781000, C438S783000, C257S635000, C257S637000
Reexamination Certificate
active
06936533
ABSTRACT:
A method of fabricating a semiconductor device having a low dielectric constant is disclosed. According to the method, a silicon oxycarbide layer is formed, treated with plasma, and patterned. The silicon oxycarbide layer is formed by a coating method or a CVD method such as a PECVD method. Treating the silicon oxycarbide layer with plasma is performed by supplying at least one gas selected from a group of He, H2, N2O, NH3, N2, O2and Ar. It is desirable that plasma be applied at the silicon oxycarbide layer in a PECVD device by an in situ method after forming the silicon oxycarbide layer. In a case in which a capping layer is further stacked and patterned, it is desirable to treat with H2-plasma. Even in a case in which an interlayer insulation is formed of the silicon oxycarbide layer and a coating layer of an organic polymer group for a dual damascene process, it is desirable to perform the plasma treatment before forming the coating layer.
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Kim Jae-Hak
Lee Kyoung-Woo
Lee Soo-Geun
Shin Hong-Jae
Mills & Onello LLP
Pham Long
Rao Shrinivas H.
Samsung Electronics Co,. Ltd.
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