Methods of forming transistor structures including separate...

Details Methods of forming transistor structures including separate... Methods of forming transistor structures including separate...

2005-02-22

2005-02-22

Niebling, John F. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S430000, C438S300000

Reexamination Certificate

active

06858505

ABSTRACT:
An integrated circuit transistor structure can include a gate electrode on a substrate and a source/drain region in the substrate adjacent to the gate electrode. An anti-punchthrough layer, separate from the substrate, is adjacent to the source/drain region.

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