Methods of forming integrated circuit devices having...

Details Methods of forming integrated circuit devices having... Methods of forming integrated circuit devices having...

2005-04-26

2005-04-26

Blum, David S. (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S244000

Reexamination Certificate

active

06884673

ABSTRACT:
In some embodiments, an integrated circuit device includes a substrate and an interlevel-insulating layer on the substrate that has a hole therein that exposes the substrate. A unitary lower electrode of a capacitor is disposed on the substrate and has a contact plug portion thereof that is disposed in the hole. A dielectric layer is on the lower electrode and an upper electrode of the capacitor is on the dielectric layer. In other embodiments, an integrated circuit device includes a substrate and an interlevel-insulating layer on the substrate that has a hole therein that exposes the substrate. A barrier layer is disposed on the exposed portion of the substrate and on sidewalls of the interlevel-insulating layer. A contact plug is disposed in the hole on the barrier layer. A lower electrode of a capacitor is disposed on the contact plug and engages the contact plug at a boundary therebetween. A dielectric layer is on the lower electrode and an upper electrode of the capacitor is on the dielectric layer.

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Notice to Submit Response, Korean Application No. 10-2001-0030529, Feb. 27, 2003.

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