Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-05-24
2005-05-24
Smith, Matthew (Department: 2825)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S262000, C438S624000
Reexamination Certificate
active
06897110
ABSTRACT:
A method of fabricating a memory array, while protecting it from charge damage. Bitlines that may have source/drain regions of memory cells are formed in a substrate. Wordlines are formed above the bitlines and may have gate regions. Next, a first metal region that is coupled to one of the bitlines is formed above the bitlines. A second metal region that is not electrically coupled to the first metal region is formed. Then, the first metal region is electrically coupled to the second metal region. Charge damage is reduced by keeping the antenna ratio between the first metal region and the bitline low. For further protection, a diode or fuse may also be formed between the substrate and the portion of the metal region that is coupled to the bitline. Also, fuse may be formed between a bitline and a wordline to protect the wordline.
REFERENCES:
patent: 5439835 (1995-08-01), Gonzalez
patent: 5854099 (1998-12-01), Farrenkopf
patent: 6235583 (2001-05-01), Kawata et al.
patent: 6271125 (2001-08-01), Yoo et al.
patent: 6372554 (2002-04-01), Kawakita et al.
patent: 6426528 (2002-07-01), Lowrey et al.
patent: 6509255 (2003-01-01), Minn et al.
patent: 6664174 (2003-12-01), Ema et al.
patent: 6677198 (2004-01-01), Hsu et al.
patent: 6699757 (2004-03-01), Hwang
patent: 6713336 (2004-03-01), Shin et al.
Hamilton Darlene G.
He Yi
Liu Zhizheng
Randolph Mark W.
Tanpairoj Ken
Advanced Micro Devices , Inc.
Luu Chuong Anh
Smith Matthew
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