Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-09-13
2005-09-13
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S151000, C438S299000, C438S301000
Reexamination Certificate
active
06943084
ABSTRACT:
A semiconductor device on a SOI and a method for manufacturing the same are provided. The semiconductor device includes a semiconductor wafer having a SOI structure including an insulating layer having a predetermined thickness and a monocrystalline silicon layer formed on the insulating layer, an isolation insulating layer formed on the insulating layer on the semiconductor wafer, a gate comprised of a gate dielectric layer and a gate conductive layer, which are sequentially stacked on the monocrystalline silicon layer, insulating layer spacers formed at the sidewalls of the gate, and a source junction and a drain junction asymmetrically formed at either side of the gate between the isolation insulating layer spacers and the insulating layer. In the semiconductor device formed on a SOI, source and drain junctions are formed at either side of a gate to be asymmetrical, and thus a ground of a transistor is formed on the SOI, and thus the electrical characteristics of the semiconductor device are improved.
REFERENCES:
patent: 4448632 (1984-05-01), Akasaka
patent: 5683934 (1997-11-01), Candelaria
patent: 6025229 (2000-02-01), Hong
patent: 6479868 (2002-11-01), An et al.
Lee Young-ki
Rim Ji-woon
Shin Heon-jong
Geyer Scott B.
Lebentritt Michael
Mills & Onello LLP
Samsung Electronics Co,. Ltd.
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