Method of forming storage nodes comprising a base in a...

Details Method of forming storage nodes comprising a base in a... Method of forming storage nodes comprising a base in a...

2005-09-13

2005-09-13

Chen, Jack (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S399000, C438S239000

Reexamination Certificate

active

06943081

ABSTRACT:
Methods of forming an electronic structure can include forming an interlayer insulating layer on a substrate, and forming a storage node comprising a base and sidewalls extending away from the base. The interlayer insulating layer can have a contact hole therein exposing a portion of the substrate. Moreover, the storage node base can be in the contact hole and the sidewalls can extend away from the base and away from the substrate with portions of the sidewalls being within the contact hole and with portions of the sidewalls extending outside the contact hole beyond the interlayer insulating layer away from the substrate. Related structures are also discussed.

REFERENCES:
patent: 2002/0024085 (2002-02-01), Nakamura et al.
patent: 2001-244429 (2001-09-01), None
patent: 1020020001999 (2002-01-01), None
patent: 2003-0001917 (2003-01-01), None
patent: 10-2003-0001917 (2003-01-01), None
Notice to Submit Response, Korean Application No. 10-2002-0029494, Jan. 21, 2005.
English Translation of Korean Office Action for Application No. 10/2002-0029494 dated May 28, 2004.

Affiliated with

Also associated with

Rating

Method of forming storage nodes comprising a base in a... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming storage nodes comprising a base in a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming storage nodes comprising a base in a... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3374705