Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Reexamination Certificate
2008-07-08
2008-07-08
Lebentritt, Michael S. (Department: 2812)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
C438S769000, C438S791000
Reexamination Certificate
active
07396776
ABSTRACT:
A semiconductor-on-insulator structure includes a buried dielectric layer interposed between a base semiconductor substrate and a surface semiconductor layer. The buried dielectric layer comprises an oxide material that includes a nitrogen gradient that peaks at the interface of the buried dielectric layer with at least one of the base semiconductor substrate and surface semiconductor layer. The interface of the buried dielectric layer with the at least one of the base semiconductor substrate and surface semiconductor layer is abrupt, providing a transition in less than about 5 atomic layer thickness, and having less than about 10 angstroms RMS interfacial roughness. A second dielectric layer comprising an oxide dielectric material absent nitrogen may be located interposed between the buried dielectric layer and the surface semiconductor layer.
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Chou Anthony I.
Furukawa Toshiharu
Haensch Wilfried
Ren Zhibin
Singh Dinkar V.
International Business Machines - Corporation
Lebentritt Michael S.
Scully , Scott, Murphy & Presser, P.C.
Withers Grant S
Zarick, Esq. Gail H.
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