Integrating n-type and p-type metal gate transistors

Details Integrating n-type and p-type metal gate transistors Integrating n-type and p-type metal gate transistors

2008-01-08

2008-01-08

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S199000, C438S700000, C257SE21008, C257S017000, C257S051000, C257S229000, C257S632000

Reexamination Certificate

active

07316949

ABSTRACT:
At least a p-type and n-type semiconductor device deposited upon a semiconductor wafer containing metal or metal alloy gates. More particularly, a complementary metal-oxide-semiconductor (CMOS) device is formed on a semiconductor wafer having n-type and p-type metal gates.

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Chinese Office Action Dated Apr. 6, 2007 issued by The State Intellectual Property Office of P.R. China and English language translation of the same.

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