Methods of fabricating field effect transistors having...

Details Methods of fabricating field effect transistors having... Methods of fabricating field effect transistors having...

2011-01-04

2011-01-04

Ngo, Ngan (Department: 2893)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S272000, C257SE21410

Reexamination Certificate

active

07863137

ABSTRACT:
Provided are a field effect transistor, a method of manufacturing the same, and an electronic device including the field effect transistor. The field effect transistor may have a structure in which a double gate field effect transistor and a recess channel array transistor are formed in a single transistor in order to improve a short channel effect which occurs as field effect transistors become more highly integrated, a method of manufacturing the same, and an electronic device including the field effect transistor. The field effect transistor can exhibit stable device characteristics even when more highly integrated in such a manner that both the length and width of a channel increase and particularly the channel can be significantly long, and can be manufactured simply.

REFERENCES:
patent: 2008/0246081 (2008-10-01), Li et al.
patent: 2009/0032866 (2009-02-01), McDaniel
patent: 2010/0093146 (2010-04-01), Jang et al.
patent: 2010/0190325 (2010-07-01), Kim
patent: 2000-077659 (2000-03-01), None
patent: 1020050015975 (2005-02-01), None
patent: 1020050108916 (2005-11-01), None

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