Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2011-06-14
2011-06-14
Nhu, David (Department: 2895)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
C438S510000, C438S680000, C438S692000, C438S706000, C257SE21170, C257SE21043, C257SE21027, C257SE21058, C257SE21077, C257SE21229, C257SE21304, C257SE21546, C257SE21006, C257SE21267
Reexamination Certificate
active
07960286
ABSTRACT:
A method of manufacturing a semiconductor structure is provided. The method includes forming a hard mask pattern on a semiconductor substrate, wherein the hard mask pattern covers active regions; forming a trench in the semiconductor substrate within an opening defined by the hard mask pattern; filling the trench with a dielectric material, resulting in a trench isolation feature; performing an ion implantation to the trench isolation feature using the hard mask pattern to protect active regions of the semiconductor substrate; and removing the hard mask pattern after the performing of the ion implantation.
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Lee Tze-Liang
Liao Ming-Han
Haynes and Boone LLP
Nhu David
Taiwan Semiconductor Manufacturing Company , Ltd.
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