Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-01-04
2011-01-04
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S618000, C438S637000, C438S641000, C438S648000, C438S672000, C438S761000, C438S778000
Reexamination Certificate
active
07863183
ABSTRACT:
The present invention relates to a method for fabricating a semiconductor device with a last level copper-to-C4 connection that is essentially free of aluminum. Specifically, the last level copper-to-C4 connection comprises an interfacial cap structure containing CoWP, NiMoP, NiMoB, NiReP, NiWP, and combinations thereof. Preferably, the interfacial cap structure comprises at least one CoWP layer. Such a CoWP layer can be readily formed over a last level copper interconnect by a selective electroless plating process.
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Daubenspeck Timothy H.
Landers William F.
Zupanski-Nielsen Donna S.
Brown, Esq. Katherine S.
Garcia Joannie A
International Business Machines - Corporation
Richards N Drew
Scully , Scott, Murphy & Presser, P.C.
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