Semiconductor device and method of manufacturing same

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C257SE21430, C257SE21431

Reexamination Certificate

active

07989296

ABSTRACT:
A semiconductor device and related method of manufacture are disclosed. The semiconductor device comprises a gate electrode formed on a semiconductor substrate, an active region containing spaces formed below the gate electrode, a channel region formed between the gate electrode and the spaces, and source and drain regions formed on opposite sides of the gate electrode within the active region. The spaces are formed by etching a semiconductor layer formed below the gate electrode in the active region.

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patent: 2002/0149031 (2002-10-01), Kim et al.
patent: 2003/0155572 (2003-08-01), Han et al.
patent: 2002009291 (2002-01-01), None
patent: 2003298047 (2003-10-01), None

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