NMOS transistor devices and methods for fabricating same

Details NMOS transistor devices and methods for fabricating same NMOS transistor devices and methods for fabricating same

2011-08-09

2011-08-09

Nguyen, Cuong Q (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S305000

Reexamination Certificate

active

07994015

ABSTRACT:
NMOS transistors having controlled channel strain and junction resistance and methods for the fabrication of same are provided herein. In some embodiments, a method for forming an NMOS transistor may include providing a substrate having a p-type silicon region and a gate stack disposed thereon, the gate stack partially defining a source and a drain region; depositing an undoped first silicon layer having a lattice adjusting element atop the p-type silicon region and within the source and the drain regions; and depositing a second silicon layer having a lattice adjusting element and an n-type dopant atop the undoped first silicon layer.

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