Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-07-26
2011-07-26
Landau, Matthew C (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21410
Reexamination Certificate
active
07985651
ABSTRACT:
A semiconductor device and method of fabricating a semiconductor device are provided. The method includes forming a gate trench in a semiconductor substrate to define source/drain regions. The source/drain regions are separated from each other by the gate trench, and the semiconductor substrate is exposed through the gate trench. The semiconductor substrate has impurities of a first conductivity type. The source/drain regions have impurities of a second conductivity type different from the first conductivity type. The concentration of the second conductivity type impurities increases as the impurities approach the surfaces of the source/drain regions. A differential gate dielectric layer is formed along the surfaces of the source/drain regions and the semiconductor substrate exposed through the gate trench. A gate electrode filling the gate trench is formed. The differential gate dielectric layer has a first thickness between the gate electrode and the semiconductor substrate and has a second thickness greater than the first thickness between the gate electrode and the source/drain regions.
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Lee Jin-woo
Lee Joo-young
Harness & Dickey & Pierce P.L.C.
Landau Matthew C
McCall Shepard Sonya D
Samsung Electronics Co,. Ltd.
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