Multiple nitrogen plasma treatments for thin SiON dielectrics

Details Multiple nitrogen plasma treatments for thin SiON dielectrics Multiple nitrogen plasma treatments for thin SiON dielectrics

2011-06-21

2011-06-21

Le, Thao X (Department: 2892)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C438S758000, C257SE21197, C257SE21292, C257SE21268, C257SE21336

Reexamination Certificate

active

07964514

ABSTRACT:
A method for the deposition of a dielectric film including forming silicon nitride on the surface of the substrate, oxidizing the silicon nitride on the surface of the substrate, exposing the surface of the substrate to a hydrogen-free nitrogen source, and annealing the substrate. A method for the deposition of a dielectric film including forming silicon nitride on the surface of the substrate, oxidizing the silicon nitride on the surface of the substrate, including exposing the surface of the substrate to a gas selected from the group of oxygen, nitric oxide, and nitrous oxide, and exposing the surface of the substrate to a hydrogen-free nitrogen source, wherein the hydrogen-free nitrogen source is a gas selected from the group of nitrogen, nitric oxide, and nitrous oxide.

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