Poly resistor and poly eFuse design for replacement gate...

Details Poly resistor and poly eFuse design for replacement gate... Poly resistor and poly eFuse design for replacement gate...

2011-07-12

2011-07-12

Dang, Trung (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21004, C257SE21016, C438S238000, C438S382000

Reexamination Certificate

active

07977754

ABSTRACT:
A semiconductor device and method for fabricating a semiconductor device is disclosed. The semiconductor device comprises a semiconductor substrate; an active region of the substrate, wherein the active region includes at least one transistor; and a passive region of the substrate, wherein the passive region includes at least one resistive structure disposed on an isolation region, the at least one resistive structure in a lower plane than the at least one transistor.

REFERENCES:
patent: 6011712 (2000-01-01), Lee
patent: 6406956 (2002-06-01), Tsai et al.
patent: 6774439 (2004-08-01), Fukuzumi et al.
patent: 7098721 (2006-08-01), Ouellette et al.
patent: 7144784 (2006-12-01), Min et al.
patent: 2007/0099326 (2007-05-01), Hsu et al.
patent: 2009/0051008 (2009-02-01), Shin et al.
patent: 2010/0224941 (2010-09-01), Uejima et al.

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