Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-03-22
2011-03-22
Nguyen, Cuong Q (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S382000
Reexamination Certificate
active
07910994
ABSTRACT:
System and method for reducing contact resistance and prevent variations due to misalignment of contacts is disclosed. A preferred embodiment comprises a non-planar transistor with source/drain regions located within a fin. An inter-layer dielectric overlies the non-planar transistor, and contacts are formed to the source/drain region through the inter-layer dielectric. The contacts preferably come into contact with multiple surfaces of the fin so as to increase the contact area between the contacts and the fin.
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Chinese Office Action dated Jun. 2, 2010, 5 pages.
Chang Cheng-Hung
Hsu Yu-Rung
Yeh Chen-Nan
Yu Chen-Hua
Nguyen Cuong Q
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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