Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma
Patent
1992-06-10
1994-10-18
Beck, Shrive P.
Coating processes
Direct application of electrical, magnetic, wave, or...
Plasma
427255, 4272551, 4272552, 4272553, 4272557, 4274192, 427574, 427579, C23C 1600
Patent
active
053567226
ABSTRACT:
A process for depositing void-free silicon oxide layers over stepped topography comprising depositing a first silicon oxide seed layer which is doped with nitrogen from a plasma of tetraethoxysilane and a nitrogen-containing gas, and depositing thereover a silicon oxide layer from a mixture of tetraethoxysilane, ozone and oxygen at low temperatures to produce a silicon oxide layer having improved properties.
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Fujino et al, J. Electrochem. Soc. vol. 138 No. 2 Feb. 1991 pp. 550-554.
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Fujino et al, Jun. 12-13, 1990 VMIC Conf. IEEE pp. 187-193.
Galiano Maria
Nguyen Bang
Yieh Ellie
Applied Materials Inc.
Beck Shrive P.
Maiorana David M.
Morris Birgit E.
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