Method of manufacturing embedded dynamic random access memory

Details Method of manufacturing embedded dynamic random access memory Method of manufacturing embedded dynamic random access memory

1998-10-15

2000-01-25

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438241, H01L 218242

Patent

active

06017790&

ABSTRACT:
A method of manufacturing embedded DRAM capable of integrating memory circuit regions and logic circuit regions together such that their top surfaces are at the same height, and hence able to maintain a high degree of planarity in integrated circuits. The method includes depositing a layer of refractory metal oxide over a high aspect ratio contact hole. Then, through the selective application of a hydrogen plasma treatment or hot hydrogen treatment, a portion of the deposited refractory metal oxide on the contact hole is transformed from non-conductive to conductive material, whereas the refractory metal oxide without a hydrogen plasma treatment or hot hydrogen treatment remains non-conductive. Therefore, a non-conductive refractory metal oxide layer can be used as a dielectric layer for a DRAM capacitor.

REFERENCES:
patent: 4039698 (1977-08-01), Fraser et al.
patent: 4471004 (1984-09-01), Kim
patent: 5292677 (1994-03-01), Dennison
patent: 5296399 (1994-03-01), Park
patent: 5399890 (1995-03-01), Okada et al.
patent: 5644151 (1997-07-01), Izumi et al.
patent: 5716875 (1998-02-01), Jones, Jr. et al.
patent: 5773314 (1998-06-01), Jiang et al.
patent: 5858831 (1999-01-01), Sung
patent: 5930618 (1999-07-01), Sun et al.

Affiliated with

Also associated with

Rating

Method of manufacturing embedded dynamic random access memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing embedded dynamic random access memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing embedded dynamic random access memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2315390