Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-10-04
1997-09-30
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257363, 257355, 361212, H01L 2360, H01L 2362
Patent
active
056728964
ABSTRACT:
An MOS electrostatic discharge, ESD, protection circuit for protecting semiconductors from ESD damage is formed on a doped silicon substrate. The circuit includes three stages. The first stage includes a first MOSFET transistor and a grounded region formed in the substrate. The first MOS transistor has a source/drain circuit connected between the first node and ground, and has a control gate electrode connected to ground. The second stage includes a string of MOSFET transistors connected in a series string. The transistors in the string are in sufficient number to provide a circuit which will conduct at a high current level to protect the output circuit from overvoltage when the voltage exceeds a critical value. The third stage includes a third stage MOSFET device with a control gate connected to the second stage output and to the output of the circuit. The source and drain circuit of the third stage device are connected between the third node and the ground connection.
REFERENCES:
patent: 3407339 (1968-10-01), Booher
patent: 4527213 (1985-07-01), Ariizumi
patent: 4821096 (1989-04-01), Maloney
Lee Jin-Yuan
Liang Mong-Song
Hardy David B.
Jones II Graham S.
Saile George O.
Taiwan Semiconductor Manufacturing Company , Ltd.
Thomas Tom
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