Apparatus for substrate processing with improved throughput and

Details Apparatus for substrate processing with improved throughput and Apparatus for substrate processing with improved throughput and

1999-10-06

2000-10-10

Lund, Jeffrie R

Coating apparatus

Gas or vapor deposition

118724, 118725, 36446828, C23C 1600, G06F 1900

Patent

active

061290440

ABSTRACT:
The present invention provides an approach which provides an increase in the number of usable substrates with a film, such as titanium nitride, deposited thereon at a sufficient deposition rate and where the film meets uniformity and resistivity specifications as well as providing good step coverage. In accordance with an embodiment, the present invention provides an apparatus for substrate processing. The apparatus circulates a heat exchange medium through a passage in a chamber body of a vacuum chamber, and heats a heater pedestal having a surface for supporting the substrate to a heater temperature. The heat exchange medium has a heat exchange temperature of about 60.degree. C. or less. The the apparatus also flows a gas into the chamber at a flow rate to deposit a film on a substrate, where the flow rate provides an effective temperature of the substrate lower than the heater temperature and where the film meets uniformity and resistance specifications after deposition onto a number of substrates. This number is less than twenty-five, in some embodiments, and less than ten in other embodiments. The use of the present invention thus avoids the discarding of the initial hundreds of processed substrates not meeting specifications that is typically experienced with the prior art processes.

REFERENCES:
patent: 4817558 (1989-04-01), Itoh
patent: 4891087 (1990-01-01), Davis et al.
patent: 4951601 (1990-08-01), Maydan et al.
patent: 4996942 (1991-03-01), Deboer et al.
patent: 5000113 (1991-03-01), Wang et al.
patent: 5238499 (1993-08-01), Van de Ven et al.
patent: 5246881 (1993-09-01), Sandhu et al.
patent: 5292554 (1994-03-01), Sinha et al.
patent: 5304248 (1994-04-01), Cheng et al.
patent: 5343938 (1994-09-01), Schmidt
patent: 5366002 (1994-11-01), Tepman
patent: 5366585 (1994-11-01), Robertson et al.
patent: 5372648 (1994-12-01), Yamamoto et al.
patent: 5474612 (1995-12-01), Sato et al.
patent: 5516367 (1996-05-01), Lei et al.
patent: 5558717 (1996-09-01), Zhao et al.
patent: 5566744 (1996-10-01), Tepman
patent: 5611865 (1997-03-01), White et al.
patent: 5785796 (1998-07-01), Lee
patent: 5834068 (1998-11-01), Chern et al.
patent: 5846332 (1998-12-01), Zhao et al.
patent: 5935334 (1999-08-01), Fong et al.
patent: 5993916 (1999-11-01), Zhao et al.
patent: 6051286 (2000-04-01), Zhao et al.
"CVD Titanium Nitride TxZ," Metal CVD Liner TxZ Centura, Applied Materials, Inc., printed in Sep. 1996.
"Liner TxZ Centura," Metal CVD Liner TxZ Centura, Applied Materials, Inc., printed in Dec. 1996.

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