Three-dimensional device layout with sub-groundrule features

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

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438245, 438248, 438249, 438386, 438388, 438391, 438392, H01L 218242

Patent

active

058937358

ABSTRACT:
Method for forming three-dimensional device structures comprising a second device having sub-groundrule features formed over a first device is disclosed. A layer having a single crystalline top surface is formed above the first device to provide the base for forming the active area of the second device. the sub-groundrule feature is formed using mandrel and spacers.

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