Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

1993-02-09

1994-04-12

Clark, Sheila V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257306, 257307, 257532, 257535, H01L 2702, H01L 2968, H01L 2978, H01L 2992

Patent

active

053028449

ABSTRACT:
According to the present invention, a lower electrode is formed on a semiconductor substrate and overgrows upward to form one electrode of a capacitor having a mushroom-shaped section. An insulation film is formed so as to at least cover the lower electrode. An upper electrode is formed so as to oppose the lower electrode and to cover at least the insulation film.

REFERENCES:
patent: 4866493 (1989-09-01), Arina et al.
patent: 4907046 (1990-03-01), Ohii et al.
patent: 4970564 (1990-11-01), Kimura et al.
patent: 5068698 (1991-11-01), Koyama
patent: 5091761 (1992-02-01), Hiraiwa et al.
patent: 5095346 (1992-03-01), Bae et al.
patent: 5124767 (1992-06-01), Koyama

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