Method and apparatus for achieving temperature uniformity of a s

Details Method and apparatus for achieving temperature uniformity of a s Method and apparatus for achieving temperature uniformity of a s

1997-05-16

2000-09-26

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With a step of measuring, testing, or sensing

117 86, 117202, 118715, C30B 2516

Patent

active

061237663

ABSTRACT:
A method for controlling the temperature of a substrate in a processing chamber. The processing chamber employs a heating control over at least two heating zones. Each heating zone is independently controllable according to a measured signal corresponding to the substrate temperature and a user-definable offset.

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Rosler et al., "Tungsten chemical vapor deposition characteristics using SiH in a single wafer system", Journal of Vacuum Science Technology B vol. 6 (6) pp. 1721-1727, Nov. 1988.
Schaper et al., "Thermal model validation for rapid thermal chemical vapor deposition of polysilicon", journal of Electrochemical Society, vol. 143, No. 1 pp. 374-381, Jan. 1996.

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