Method for forming vertical channels in split-gate flash memory

Details Method for forming vertical channels in split-gate flash memory Method for forming vertical channels in split-gate flash memory

1997-12-11

1999-10-19

Trinh, Michael

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438259, 438589, 438593, H01L 21336

Patent

active

059703415

ABSTRACT:
A method of forming a vertical memory split gate flash memory device on a silicon semiconductor substrate is provided by the following steps. Form a floating gate trench hole in the silicon semiconductor substrate, the trench hole having trench surfaces. Form a tunnel oxide layer on the trench surfaces, the tunnel oxide layer having outer surfaces. Form a floating gate electrode layer filling the trench hole on the outer surfaces of the tunnel oxide layer. Form source/drain regions in the substrate self-aligned with the floating gate electrode layer. Pattern the floating gate electrode layer by removing the gate electrode layer from the drain region side of the trench hole. Form a control gate hole therein. Form an interelectrode dielectric layer over the top surface of the floating gate electrode, and over the tunnel oxide layer. Form a control gate electrode over the interelectrode dielectric layer over the top surface of the floating gate electrode and extending down into the control gate hole in the trench hole.

REFERENCES:
patent: 5045490 (1991-09-01), Esquivel et al.
patent: 5049515 (1991-09-01), Tzeng
patent: 5162247 (1992-11-01), Hazani
patent: 5180680 (1993-01-01), Yang
patent: 5313421 (1994-05-01), Guterman et al.
patent: 5460989 (1995-10-01), Wake
patent: 5467305 (1995-11-01), Bertin et al.
patent: 5468663 (1995-11-01), Bertin et al.
patent: 5595927 (1997-01-01), Chen et al.
patent: 5786612 (1998-07-01), Otani et al.

Affiliated with

Also associated with

Rating

Method for forming vertical channels in split-gate flash memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming vertical channels in split-gate flash memory , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming vertical channels in split-gate flash memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2068407