Method for forming low dielectric passivation of copper intercon

Details Method for forming low dielectric passivation of copper intercon Method for forming low dielectric passivation of copper intercon

1999-01-05

2000-11-14

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438626, 438629, 438645, 438660, 438661, H01L 2144, H01L 214763

Patent

active

061470007

ABSTRACT:
A Cu interconnect member is passivated by diffusing Sn, Ta or Cr atoms into its upper surface to form an intermetallic layer. Embodiments include depositing Cu by electroplating or electroless plating to fill a damascene opening in a dielectric layer, CMP, depositing a sacrificial layer of Sn, Ta or Cr on the planarized surface, heating to diffuse Sn, Ta or Cr into the upper surface of the deposited Cu to form a passivating intermetallic alloy layer, and removing any remaining sacrificial layer by CMP or etching.

REFERENCES:
patent: 5447599 (1995-09-01), Li et al.
patent: 5483105 (1996-01-01), Kaja et al.
patent: 5539256 (1996-07-01), Mikagi
patent: 5598027 (1997-01-01), Matsuura
patent: 5693563 (1997-12-01), Teong
patent: 5739579 (1998-04-01), Chiang et al.
patent: 5818110 (1998-10-01), Cronin
patent: 5891513 (1999-04-01), Dubin et al.
patent: 5969422 (1999-10-01), Ting et al.
patent: 5976710 (1999-10-01), Sachdev et al.
patent: 6022808 (2000-02-01), Nagami et al.

Affiliated with

Also associated with

Rating

Method for forming low dielectric passivation of copper intercon does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming low dielectric passivation of copper intercon, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming low dielectric passivation of copper intercon will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2064988