Self-aligned contact structures using high selectivity etching

Details Self-aligned contact structures using high selectivity etching Self-aligned contact structures using high selectivity etching

1998-01-12

1999-02-16

Bowers, Charles

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Multiple layers

438762, 438769, 438787, 438791, 438738, 438695, H01L 2170

Patent

active

058720634

ABSTRACT:
A self-aligned structure and method of etching contact holes in the self-aligned structure are described. The dielectric materials, etching methods, and etchants are chosen to provide high selectivity etching. The structure comprises an electrode with a silicon oxy-nitride cap and silicon oxy-nitride spacers on the sidewalls of the electrode and the cap. An etch stop layer of silicon nitride is deposited over the substrate covering the spacers and cap. A layer of silicon oxide is deposited over the etch stop layer. Etching methods and etchants are used which provide a ratio of the etching rate of silicon oxide to the etching rate of silicon nitride or silicon oxy-nitride of at least eight and a ratio of the etching rate of silicon nitride to the etching rate of silicon oxy-nitride of at least two.

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