Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-12-04
2000-10-24
Niebling, John F.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438762, 438763, 438775, 438776, 438777, H01L 21336, H01L 2131, H01L 21469
Patent
active
061366544
ABSTRACT:
An embodiment of the instant invention is a method of forming a dielectric layer, the method comprising the steps of: providing a semiconductor substrate (substrate 12), the substrate having a surface; forming an oxygen-containing layer (layer 14) on the semiconductor substrate; and subjecting the oxygen-containing layer to a nitrogen containing plasma (plasma 16) so that the nitrogen is either incorporated into the oxygen-containing layer (see regions 18, 19, and 20) or forms a nitride layer at the surface of the substrate (region 22). Using this embodiment of the instant invention, the dielectric layer can be substantially free of hydrogen. Preferably, the oxygen-containing layer is an SiO.sub.2 layer or it is comprised of oxygen and nitrogen (preferably an oxynitride layer). The plasma is, preferably, a high-density plasma. Preferably, a source of nitrogen is introduced to the plasma to form the nitrogen containing plasma. The source of nitrogen is preferably comprised of a material consisting of: N.sub.2, NH.sub.3, NO, N.sub.2 O, or a mixture thereof.
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Grider Douglas T.
Hattangady Sunil
Kraft Robert
Hoel Carlton H.
Holland Robby T.
Jones Josetta I.
Niebling John F.
Telecky Jr. Frederick J.
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