Method of forming a portion of a memory cell

Details Method of forming a portion of a memory cell Method of forming a portion of a memory cell

1995-05-08

2000-11-28

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438241, 438268, 438270, H01L 218244

Patent

active

061534587

ABSTRACT:
The invention may be incorporated into a method for forming a vertically oriented semiconductor device structure, and the semiconductor structure formed thereby, by forming a first transistor over a portion of a substrate wherein the first transistor has a gate electrode and a source and drain regions. First and second interconnect regions are formed over a portion of the gate electrode and a portion of the source and drain regions of the first transistor, respectively. A source and drain region of a second transistor is formed over the second interconnect. A Vcc conductive layer is formed over a portion of the source and drain region of the second transistor which is formed over the second interconnect.

REFERENCES:
patent: 3584412 (1971-06-01), Hodges
patent: 4146902 (1979-03-01), Tanimoto et al.
patent: 4322821 (1982-03-01), Lohstroh et al.
patent: 4558343 (1985-12-01), Ariizumi et al.
patent: 4622575 (1986-11-01), Vora et al.
patent: 4653025 (1987-03-01), Minato et al.
patent: 5041884 (1991-08-01), Kumamoto et al.
patent: 5103276 (1992-04-01), Shen et al.
patent: 5106775 (1992-04-01), Kaga et al.
patent: 5112765 (1992-05-01), Cederbaum et al.
patent: 5134581 (1992-07-01), Ishibashi et al.
patent: 5162889 (1992-11-01), Itomi
patent: 5210429 (1993-05-01), Adan
patent: 5330927 (1994-07-01), Lee
Takato, H. et al., "Impact of Surrounding Gate Transistor (SGT) for Ultra-High-Density LSI's," IEEE Transactions on Electron Devices, vol. 38, No. 3, Mar. 1991.

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