Process and structure for increasing capacitance of stack capaci

Details Process and structure for increasing capacitance of stack capaci Process and structure for increasing capacitance of stack capaci

1999-08-17

2000-11-07

Whitehead, Jr., Carl

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257534, H01L 27108

Patent

active

061440590

ABSTRACT:
The present invention provides a process and a structure for increasing a capacitance of a stack capacitor. The process includes steps of: a) forming a contact hole on a silicon substrate having an oxide layer, b) forming a polysilicon contact plug of a first polysilicon layer in the contact hole; c) forming a second gibbous polysilicon layer on a surface of the contact plug, and d) forming a third polysilicon layer above the gibbous polysilicon layer and a portion of the oxide layer to form the stack capacitor, wherein the gibbous polysilicon layer increases the capacitance of the stack capacitor.

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