Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-05-30
2000-11-07
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257309, H01L 27108, H01L 2976, H01L 2994, H01L 31119
Patent
active
061440582
ABSTRACT:
A dynamic random access memory (DRAM) device includes a stacked capacitor including a storage electrode, a dielectric film and a cell plate. In a preferred embodiment, the storage electrode contacts with a diffusion region of a substrate through a contact hole. The storage electrode has a first fin which has a first uniform portion with a width greater than the width of the contact hole, and a second uniform portion serving as a side wall, which is formed around an inner-wall of the first uniform portion defining the first opening, so that a second opening defined by the second uniform portion, has a width which is substantially identical to the width of the contact hole. The use of the second uniform portion to form the stacked capacitor allows for a reduction in the size of the contact hole relative to the conventional DRAM devices, and therefore allows for a reduction in the overall size of the DRAM device of the present invention, relative to conventional DRAM devices.
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European Search Report for European Patent Application No. 96 118 058.5 dated Nov. 3, 1999.
T. Ema et al., "3-Dimensional Stacked Capacitor Cell for 16M and 64M Drams", International Electron Devices Meetings, 592-IEDM 88, Dec. 11-14, 1988 (a copy thereof is attached hereto).
Journal of the Electrochemical Society, vol. 138, No. 2, Feb. 1991, Manchester, New Hampshire US, pp. 619-620; Shih Wei Sun; "A Polysilicon Hard-Mask/Spacer Process for Sub-0.5 Micron ULSI Contacts".
Japanese Journal Of Applied Physics, 21st Conference On Solid State Devices & Materials, Extended Abstracts, Aug. 28, 1989, Tokyo Japan, pp. 141-144; S. Inoue et al.: "A New Stacked Capacitor Cell With Thin Box Structured Storage Node".
Korean Search Report dated Dec. 20, 1994 in corresponding Korean application.
Fujitsu Limited
Ngo Ngan V.
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