Methods and apparatus for cleaning surfaces in a substrate proce

Details Methods and apparatus for cleaning surfaces in a substrate proce Methods and apparatus for cleaning surfaces in a substrate proce

1996-11-13

1998-09-22

Elmore, Reba I.

Boots, shoes, and leggings

134 11, G06F 1900

Patent

active

058124039

ABSTRACT:
The present invention provides a method for cleaning a processing chamber. According to a specific embodiment, the method includes steps of depositing a dielectric film on a wafer on a ceramic heater in the processing chamber in a first time period, with the ceramic heater heated to a first temperature of at least about 500.degree. C. during the deposition step; and introducing reactive species into the processing chamber from a clean gas that is input to a remote microwave plasma system during a second time period, with the ceramic heater heated to a second temperature of at least about 500.degree. C. during the introducing step. The method also includes cleaning surfaces in the processing chamber, with cleaning performed by the reactive species. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.

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patent: 5449411 (1995-09-01), Fukuda et al.
patent: 5647953 (1997-07-01), Williams et al.
patent: 5676759 (1997-10-01), Ye et al.

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