Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

1996-08-30

2000-05-02

Whitehead, Jr., Carl

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438232, 438305, 438586, 438592, 438299, 438301, 438307, H01L 218238

Patent

active

060571853

ABSTRACT:
An N-type impurity is ion-implanted in the exposed surface of a semiconductor substrate, thereby forming N-type diffusion layers. A P-type impurity is ion-implanted in the semiconductor substrate covered with a cover film, thereby forming P-type diffusion layers. A compound film of a semiconductor and a metal is formed on each of the surfaces of the N-type and P-type diffusion layers.

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