Method of forming sharp beak of poly by nitrogen implant to impr

Details Method of forming sharp beak of poly by nitrogen implant to impr Method of forming sharp beak of poly by nitrogen implant to impr

1997-12-22

1999-01-12

Booth, Richard A.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438593, 438594, H01L 21824

Patent

active

058588400

ABSTRACT:
A method is provided for forming a short and sharp gate bird's beak in order to increase the erase speed of a split-gate flash memory cell. This is accomplished by implanting nitrogen ions in the first polysilicon layer of the cell and removing them from the area where the floating gate is to be formed. Then, when the polysilicon layer is oxidized to form polyoxide, the floating gate region without the nitrogen ions oxidizes faster than the surrounding area still having the nitrogen ions. Consequently, the bird's beak that is formed at the edges of the polyoxide assumes a sharper shape with smaller size than that is found in prior art. This results in an increase in the erase speed of the memory cell.

REFERENCES:
patent: 4897368 (1990-01-01), Kobushi et al.
patent: 5278087 (1994-01-01), Jenq
patent: 5371028 (1994-12-01), Koh
patent: 5480828 (1996-01-01), Hsu et al.
patent: 5610084 (1997-03-01), Solo de Zaldivar
S Wolf, "Silicon Processing For The VLSI Era" vol. 2, Lattice Press, Sunset Beach, CA. 1990, pp. 632-634. p. 438.

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