Methods for manufacturing integrated circuit memory devices incl

Details Methods for manufacturing integrated circuit memory devices incl Methods for manufacturing integrated circuit memory devices incl

1997-01-21

1999-01-12

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438244, 438633, H01L 218242

Patent

active

058588337

ABSTRACT:
Integrated circuit memory devices are manufactured by forming spaced apart source and drain regions in an integrated circuit substrate, and an insulated gate on the integrated circuit substrate therebetween. An interlayer insulating layer is formed on the integrated circuit substrate, including first and second conductive pad contacts which extend therethrough and which electrically contact the source and the drain region, respectively. A trench is formed in the interlayer insulating layer, including in the second conductive pad contact. A first insulating layer is formed to line the trench, except for adjacent the second conductive pad contact. A buried bit line is formed in the trench, electrically contacting the second conductive pad contact through the first insulating layer. A second insulating layer is formed on the first insulating layer and on the buried bit line, except for adjacent the first conductive pad contact. A patterned storage electrode is formed on the second insulating layer, which electrically contacts the first conductive contact pad.

REFERENCES:
patent: 5665624 (1997-09-01), Hong
patent: 5688720 (1997-11-01), Hayashi
patent: 5723381 (1998-03-01), Grewal et al.

Affiliated with

Also associated with

Rating

Methods for manufacturing integrated circuit memory devices incl does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods for manufacturing integrated circuit memory devices incl, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods for manufacturing integrated circuit memory devices incl will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1514978