Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1996-04-22
1998-11-10
Nguyen, Nam
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
438694, 438696, 438697, 438699, 438700, 438702, 438703, 438712, 438714, 438725, 438733, 438734, 438738, 438648, 438656, 438685, 427 97, C23C 1434, H01L 21465, B05D 512
Patent
active
058338179
ABSTRACT:
A method is described for overcoming the non-conformity and poor step coverage incurred when materials such as metals and barrier layers are deposited into contact openings by physical-vapor-deposition(PVD) techniques such as sputtering and evaporation. Conventional PVD deposition into a vertical walled opening results in a deposit whose thickness diminishes towards the base of the opening. This causes voids when the opening is subsequently filled by chemical-vapor-deposited(CVD) tungsten as well as potential failure of the barrier material due to inadequate coverage at the base of the opening. The method utilizes a two stage reactive ion etching technique to selectively etch the upper portion of the deposited layer while protecting the lower portion with photoresist. A second deposition of barrier layer material then restores material at the top of the opening while augmenting the thickness at the base. This reduces the negative taper of the opening and allows total filling by the subsequent CVD deposition.
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S. Wolf, "Silicon Processing for The VLSI Era-vol. 2,", Lattice Press, Sunset Beach, CA, pp. 247-248, undated.
Tsai Chia Shiung
Wang Ying Yin
Yu Chen-Hua Douglas
Ackerman Stephen B.
McDonlald Rodney G.
Nguyen Nam
Saile George O.
Taiwan Semiconductor Manufacturing Company , Ltd.
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