Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1999-04-29
2000-04-11
Whitehead, Jr., Carl
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438738, H01L 218234
Patent
active
060487615
ABSTRACT:
A self-aligned protection diode is formed at the first polycrystalline silicon level, thereby enabling in-process charging damage protection while reducing the layout area. The self-aligned protection diode is formed by providing an etch stop layer having an arcuate portion with different etching characteristics than horizontal portions, isotropically etching the arcuate portion to form a through hole exposing a side surface of a polycrystalline silicon layer and the underlying semiconductor substrate, ion implanting impurities to form the protection diode, and filling the through hole with a metal interconnecting the side surface of the polycrystalline silicon layer with the vertically self-aligned protection diode.
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Advanced Micro Devices , Inc.
Davis Jamie L.
Jr. Carl Whitehead
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