Semiconductor heterostructure nanowire devices

Details Semiconductor heterostructure nanowire devices Semiconductor heterostructure nanowire devices

2011-06-14

2011-06-14

Pham, Thanh V (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

Reexamination Certificate

active

07960715

ABSTRACT:
Nanowire devices comprising core-shell or segmented nanowires are provided. In these nanowire devices, strain can be used as a tool to form metallic portions in nanowires made from compound semiconductor materials, and/or to create nanowires in which embedded quantum dots experience negative hydrostatic pressure or high positive hydrostatic pressure, whereby a phase transitions may occur, and/or to create exciton crystals.

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