Zirconium oxide and hafnium oxide etching using halogen...

Details Zirconium oxide and hafnium oxide etching using halogen... Zirconium oxide and hafnium oxide etching using halogen...

2006-03-14

2006-03-14

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S591000, C438S722000, C438S738000

Reexamination Certificate

active

07012027

ABSTRACT:
A method is described for selectively etching a high k dielectric layer that is preferably a hafnium or zirconium oxide, silicate, nitride, or oxynitride with a selectivity of greater than 2:1 relative to silicon oxide, polysilicon, or silicon. The plasma etch chemistry is comprised of one or more halogen containing gases such as CF4, CHF3, CH2F2, CH3F, C4F8, C4F6, C5F6, BCl3, Br2, HF, HCl, HBr, HI, and NF3and leaves no etch residues. An inert gas or an inert gas and oxidant gas may be added to the halogen containing gas. In one embodiment, a high k gate dielectric layer is removed on portions of an active area in a MOS transistor. Alternatively, the high k dielectric layer is used in a capacitor between two conducting layers and is selectively removed from portions of an ILD layer.

REFERENCES:
patent: 6297539 (2001-10-01), Ma et al.
patent: 6300202 (2001-10-01), Hobbs et al.
patent: 6306715 (2001-10-01), Chan et al.
patent: 6432779 (2002-08-01), Hobbs et al.
patent: 2003/0211748 (2003-11-01), Jin et al.
patent: 2004/0038554 (2004-02-01), Ahn et al.
patent: 200275972 (2002-03-01), None

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