X-ray pattern masking by a reflective reduction projection optic

Details X-ray pattern masking by a reflective reduction projection optic X-ray pattern masking by a reflective reduction projection optic

1991-12-23

1993-06-22

Porta, David P.

X-ray or gamma ray systems or devices

Specific application

Lithography

378 35, 378 84, 378145, 2504922, G03F 720, G21K 500

Patent

active

052221121

ABSTRACT:
In printing patterns on a mask onto a wafer with high accuracy via a reflective reduction projection optical system by using an X-ray or vacuum ultraviolet beam there is an elliptical mirror having a source position defined in an X-ray source and a position of reflection image of entrance pupil of an imaging optical system with respect to the mask as foci and introducing means for synchronously scanning the mask and wafer. Due to inserting a plane mirror for bending an X-ray by approximately 90.degree. at at least one point in the imaging optical system so that the plane of incidence may be perpendicular to the polarization plane the reflectivity does not lower even when the angle of incidence is 45.degree.. A reflecting mirror or an X-ray filter having a lower reflectivity in the peripheral part thereof as compared with the reflectivity of the central part thereof in the stop position of the imaging optical system, brings about an effect of lessened influence of mutual interference between adjacent pattern provides pattern printing with high shape accuracy.

REFERENCES:
patent: 4891830 (1990-01-01), Iwahashi
patent: 4945551 (1990-07-01), Makabe et al.
patent: 5003567 (1991-03-01), Hawryluk et al.
patent: 5063586 (1991-11-01), Jewell et al.
patent: 5131022 (1992-07-01), Terashima et al.

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