X-ray mask and method for producing same

Details X-ray mask and method for producing same X-ray mask and method for producing same

1991-03-25

1993-01-05

Porta, David P.

X-ray or gamma ray systems or devices

Specific application

Lithography

378 35, G21K 500

Patent

active

051777738

ABSTRACT:
An X-ray mask comprises an absorber pattern composed of a material capable of absorbing X-ray, a mask substrate for supporting the absorber pattern, composed of a material capable of transmitting X-ray, and a support frame for supporting the mask substrate, wherein the mask substrate is composed of a mask substrate material whose impurity content is suppressed to reduce positional distortions generated by X-ray radiation. Generation of positional distortions by X-ray exposure is inhibited and an arrangement of mask pattern can be ensured with a high precision.

REFERENCES:
patent: 4948482 (1990-08-01), Kobayashi et al.
Solid State Technology, Sep. 1984, pp. 192-199, "Advances in X-ray Mask Technology", A. R. Shimkunas.
Vac. Sci. Technol., 21 (4), Nov./Dec. 1982, pp. 1017-1021; "Silicon Nitride Single-layer X-ray Mask", Misao Sekimoto etal.
J. Vac. Technol. B 6 (1), Jan./Feb. 1988, pp. 162-166.
"Radiation Damage in Boron Nitride X-ray lithography masks", Paul King et al.
J. Vac. Sci. Technol. B 5 (1), Jan./Feb. 1987, pp. 257-261 "Radiation Damage effects in Boron Nitride Mask membranes subjected to X-ray exposures", W. A. Johnson et al.
J. Vac. Sci. Technol., B 6 (6), Nov./Dec. 1988, pp. 2190-2195 "Quantitative in situ characterization of X-ray mask distortions", G. M. Wells et al.
1st Microprocessor Conference, 1988, A-7-3, pp. 78-79.
Journal of Electrochemical Society, vol. 123, No. 5, pp. 723-728. May 1976.

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