X-ray mask

Details X-ray mask X-ray mask

2005-05-24

2005-05-24

Church, CRaig E. (Department: 2882)

X-ray or gamma ray systems or devices

Specific application

Lithography

Reexamination Certificate

active

06898267

ABSTRACT:
In an x-ray absorber in accordance with the present invention, reduced transmittance of the x-ray absorber is suppressed while phase shift amount in the vicinity of π-radians is achieved. For this purpose, a material is used that has a high transmittance per film thickness and contains an element with a high phase shift amount and an element with a low transmittance, as a material composition that forms the x-ray absorber. In other words, the transmittance of the x-ray absorber is mainly determined by the element with a low transmittance, and phase shift falling short of π-radians is compensated with the element with a high transmittance and a high phase shift.

REFERENCES:
patent: 4604292 (1986-08-01), Evans et al.
patent: 4698285 (1987-10-01), Ehrfeld et al.
patent: 5870448 (1999-02-01), Maehara et al.
patent: 6434053 (2002-08-01), Fujuwara
Fujii, K., et al., “Low-dose exposure technique for 100-nm-diam hole replication in x-ray lithography”, J. Vac. Sci. Technol. B 16 (6), Nov./Dec. 1998, pp. 3504-3508.
Fujii, K., et al., “Optimum Phase Condition for Low-Contrast X-Ray Masks”, Jpn. J. Appl. Phys. vol. 38, 1999, pp. 7076-7079.
Toyota, E., et al., “Technique for 25nm x-ray Nanolithography”, J. Vac. Sci. Techonol. B 19 (6), Nov./Dec. 2001, pp. 2428-2433.

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