X-ray exposure method with an X-ray mask comprising phase shifte

Details X-ray exposure method with an X-ray mask comprising phase shifte X-ray exposure method with an X-ray mask comprising phase shifte

1992-07-06

1994-12-13

Rosasco, Steve

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making named article

430 5, 430270, 378 34, 378 35, G03C 500

Patent

active

053729161

ABSTRACT:
In an X-ray exposure method, consideration was made to application of a concept of a phase shift method which is used for a light exposure method, in order to improve the resolution. As a result, phase shift layers made of a material having an appropriate refractivity are provided on side walls of an absorbing pattern of an X-ray mask to improve the resolution by an interference effect. One or more layers made of a material having a refractivity different from that of the absorbing pattern are formed on the side walls of the absorbing pattern of the X-ray mask.

REFERENCES:
Japanese Journal Microelectronic Engineering-vol. 9 (1989) pp. 127-130.
Optical Systems for Soft X-rays, 1986, pp. 3-7.
Proceedings AIB Conference p. 340.
Yamashita et al, ("0.2 .mu.m or Less i-Line Lithography by Phase-Shifting-Mask Technology", IEEE, 1990, pp. 33.3.1-33.3.4).

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