Writing circuit for a phase change memory device

Details Writing circuit for a phase change memory device Writing circuit for a phase change memory device

2006-07-11

2006-07-11

Le, Thong Q. (Department: 2827)

Static information storage and retrieval

Read/write circuit

Precharge

C365S189011

Reexamination Certificate

active

07075841

ABSTRACT:
A memory device of a phase change type, wherein a memory cell has a memory element of calcogenic material switcheable between at least two phases associated with two different states of the memory cell. A write stage is connected to the memory cell and has a capacitive circuit configured to generate a discharge current having no constant portion and to cause the memory cell to change state.

REFERENCES:
patent: 3922648 (1975-11-01), Buckley
patent: 4225946 (1980-09-01), Neale et al.
patent: 6487113 (2002-11-01), Park et al.
patent: 6868031 (2005-03-01), Ooishi
patent: 2003/0002332 (2003-01-01), Lowrey
patent: 2003/0081451 (2003-05-01), Lowrey et al.
patent: WO 03/058633 (2003-07-01), None
European Search Report, EP 03425390, Nov. 20, 2003.

Affiliated with

Also associated with

Rating

Writing circuit for a phase change memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Writing circuit for a phase change memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Writing circuit for a phase change memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3565791