Work function based voltage reference

Details Work function based voltage reference Work function based voltage reference

2008-04-07

2010-06-01

Menz, Douglas M (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S276000

Reexamination Certificate

active

07727833

ABSTRACT:
A voltage reference is created from an operational amplifier circuit having two substantially identical P-channel metal oxide semiconductor (P-MOS) transistors with each one having a different gate dopant. The different gate dopants result in different threshold voltages for each of the two otherwise substantially identical P-MOS transistors. The difference between these two threshold voltages is then used to create the voltage reference equal to the difference. The two P-MOS transistors are configured as a differential pair in the operational amplifier circuit and the output of the operational amplifier is used as the voltage reference.

REFERENCES:
patent: 4327320 (1982-04-01), Oguey et al.
patent: 6211555 (2001-04-01), Randazzo et al.
patent: 6437550 (2002-08-01), Andoh et al.
patent: 2006/0033128 (2006-02-01), Chi
MOS Voltage Reference Based on Polysilicon Gate Work Function Difference; Henri J. Oguey, Member, IEEE, and Bernard Gerber; IEEE Journal of Solid-State Circuits, vol. SC-15, No. 3, Jun. 1980; pp. 264-269.
A New NMOS Temperature-Stable Voltage Reference; Robert A. Blauschild, Member, IEEE, Patrick A. Tucci, Member, IEEE, Richard S. Muller, Senior Member, IEEE, and Robert G. Meyer, Senior Member, IEEE; IEEE Journal of Solid-State Circuits, vol. SC-13, No. 6, Dec. 1978; pp. 767-774.

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